首页> 外文OA文献 >Inverse quantum spin Hall effect generated by spin pumping from precessing magnetization into a graphene-based two-dimensional topological insulator
【2h】

Inverse quantum spin Hall effect generated by spin pumping from precessing magnetization into a graphene-based two-dimensional topological insulator

机译:反自旋泵浦产生的反量子自旋霍尔效应   将磁化强度转化为基于石墨烯的二维拓扑结构   绝缘子

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We propose a multiterminal nanostructure for electrical probing of thequantum spin Hall effect (QSHE) in two-dimensional (2D) topological insulators.The device consists of a ferromagnetic (FM) island with precessingmagnetization that pumps (in the absence of any bias voltage) pure spin currentsymmetrically into the left and right adjacent 2D TIs modeled as graphenenanoribbons with the intrinsic spin-orbit (SO) coupling. The QSH regime of thesix-terminal TI|FM|TI nanodevice, attached to two longitudinal and fourtransverse normal metal electrodes, is characterized by the SO-coupling-inducedenergy gap, chiral spin-filtered edge states within finite length TI regions,and quantized spin Hall conductance when longitudinal bias voltage is applied,despite the presence of the FM island. The same unbiased device, but withprecessing magnetization of the central FM island, blocks completely pumping oftotal spin and charge currents into the longitudinal electrodes whilegenerating DC transverse charge Hall currents. Although these transverse chargecurrents are not quantized, their induction together with zero longitudinalcharge current is a unique electrical response of TIs to pumped pure spincurrent that cannot be mimicked by SO-coupled but topologically trivialsystems. In the corresponding two-terminal inhomogeneous TI|FM|TInanostructures, we image spatial profiles of local spin and charge currentswithin TIs which illustrate transport confined to chiral spin-filtered edgesstates while revealing concomitantly the existence of interfacial spin andcharge currents flowing around TI|FM interfaces and penetrating into the bulkof TIs over some short distance.
机译:我们提出了一种多端子纳米结构,用于对二维(2D)拓扑绝缘体中的量子自旋霍尔效应(QSHE)进行电探测。该器件由铁磁(FM)岛组成,该岛具有进动的磁化能力,可泵浦(在没有任何偏置电压的情况下)纯净将电流对称地旋转到左右两个二维TI中,这些二维TI具有固有的自旋轨道(SO)耦合,建模为石墨烯纳米带。附着在两个纵向和四个横向普通金属电极上的六末端TI | FM | TI纳米器件的QSH机制的特征在于,SO耦合诱导的能隙,有限长度TI区域内的手性自旋滤波边缘状态和量化自旋施加纵向偏置电压时的霍尔电导,尽管存在FM岛。相同的无偏器件,但具有中心FM岛的磁化强度,可在产生DC横向电荷霍尔电流的同时,完全阻止将总自旋和充电电流泵入纵向电极。尽管未对这些横向充电电流进行量化,但它们的感应以及纵向充电电流为零,是TI对泵浦纯自旋电流的独特电响应,这无法通过SO耦合但在拓扑上琐碎的系统得以模仿。在相应的两端非均质TI | FM | TInano结构中,我们在TI内成像了局部自旋和电荷电流的空间分布图,这些空间图说明了受限于手性自旋滤波边缘状态的输运,同时揭示了在TI | FM界面周围流动的界面自旋和电荷电流的存在并在短距离内渗透到大量TI。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号